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Appendix A Process Activities of the Nanofab Program Table A.1 presents information on process activities in the Center for Nanoscale Science and Technology’s Nanofab program, described during the FY 2009 review by the Panel on Nanoscale Science and Technology. Exclusive of the Nanofab presentation to the panel, eight processing activities were described: MEMS devices (#6, #12, #17); MEMS structure (#9); large linewidth structures >1 m (#1, #16); e-beam patterned 25 nm lines (#8); and large linewidth (~5 m) e-beam patterned electrodes (#4). The Nanofab presentation described an additional seven processing examples: five of the process examples were shown as SEMs with no technical details: MEMS device (#25) and patterned features <100 nm using e-beam lithography (#28, #29, #30, #31); two of these process examples were described in detail: FIB patterning of probe tips (#32) and e-beam patterned 100 nm gold islands (#33). 19

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TABLE A.1 Nanofab Process Activities Type of Project or Activity NIST Process Item Use of Nanofab Electron Physics Group Project: 1 Nanomagnetics Magnetic lines with edges, fabrication Yes of magnetic nanodots 2 Modeling of Magnetics None No 3 Laser Controlled Atoms None No 4 Atomic Fabrication Graphene structures with leads Yes Nanofabrication Group Project: 5 Electronic Nanodevices Nanoscale shadow masks, graphene Yes device fabrication, functional tip fabrication, polymer brush synthesis 6 Nanoplasmonics Photo pressure cantilever Yes 7 Nanophotonics None No 8 Directed Self-Assembly 25 nm lines Yes 9 Directed Self-Assembly Si3N4 membranes Yes 10 Sublithographic Patterns 50 nm lines No 11 Patterned Arrays 40 nm pitch dots No 12 MEMS/NEMS MEMS torque device Yes 13 Nanofluidics NEMS None No Energy Research Group Project: 14 Response in PV Materials None to date No 15 Thermionic Devices None to date No 16 CdTe PV Cells Electrodeposited features Yes 17 Precision Measurements SOI cantilever device Yes Posters Activity: 18 Spin Torque Modeling None No 19 Graphene Measurements None No 20 Scanning Probe Microscopy Scanning probes Yes 21 Photoresponse in PV Materials None No 22 Particle Tracking Etched silicon trenches Yes 23 Plasmon Metrology Photolithography Yes 24 Tapered Optical Fibers None No 25 Fabrication for Graphene Measurements Photo, e-beam lithography Yes 26 Interference Lithography for Photolithography, etching Yes Nanomagnetics Nanofab (Process Examples) Activity: 27 Gas Sensor MEMS microscale Yes 28 Nano Imprinting Imprint feature Yes 29 Molecular Transport Nanopore devices Yes 30 Nanostructures Magnetic islands Yes 31 AFM Standards Patterned HSQ resist Yes 32 AFM Tip Structures Patterned AFM tip using FIB Yes 33 SERS Array Gold dot pattern Yes NOTE: MEMs, microelectromechanical systems; NEMs, nanoelectromechanical systems; PV, photovoltaic; SOI, silicon on insulator; AFM, atomic force microscope; HSQ, hydrogen silsesquioxane; FIB, focused ion beam; SERS, Surface Enhanced Raman Spectroscopy; SEM, scanning electron microscope. 20