Click for next page ( 106


The National Academies | 500 Fifth St. N.W. | Washington, D.C. 20001
Copyright © National Academy of Sciences. All rights reserved.
Terms of Use and Privacy Statement



Below are the first 10 and last 10 pages of uncorrected machine-read text (when available) of this chapter, followed by the top 30 algorithmically extracted key phrases from the chapter as a whole.
Intended to provide our own search engines and external engines with highly rich, chapter-representative searchable text on the opening pages of each chapter. Because it is UNCORRECTED material, please consider the following text as a useful but insufficient proxy for the authoritative book pages.

Do not use for reproduction, copying, pasting, or reading; exclusively for search engines.

OCR for page 105
Appendix A GLOSSARY OF SOME TERMS AND ACRONYMS USED IN THIS REPORT BiCMOS - an integration of bipolar and complementary MOS devices on a single chip Blind via - a via that terminates only on one side of the board Buried via - a via that terminates on two buried planes CAD - computer-aided design CAM - computer-aided manufacturing Captive production - company in-house component production and consumption, not for outs ide sale CC - chip carrier Chip - diced semiconductor active element to be mounted (bonded) in a package ~ see " die " ~ CMOS - complementary metal- oxide - semiconductor COB - chip on board CPU - central processing unit C4 - controlled collapse chip connection CTE - coefficient of thermal expansion (~) (also see ''ICE" ~ Die - IC chip as cut (diced) from a finished wafer, to be mounted (bonded) in a package t see "chip"] DIP - dual in-line package DRAM - dynamic random access memory (' - real part of dielectric permitt~vity (E '/6O = k) 105

OCR for page 105
106 (" - imaginary part of dielectric permittivity SO - dielectric permittivity of free space ~ - dielectric constant fused interchangeably with k in the text j ECL - emitter-coupled logic EMI - electromagnetic interference FET - field effect transistor GaAs - gallium arsenide HTSC - high-temperature superconductor IC - integrated circuit I/O - inputs/outp~ts k - relative dielectric constant (if) [used interchangeably with Ej ~ - thermal conductivity MCM - multichip module MLB - mult~layer board MOS - metal-oxide-semiconductor MOSFET - metal-oxide-semiconduc~cr field effect transistor NAND - "not" I' end" (a logic circuit function designation' NMOS - n-channel metal-oxide-cemiconductor NOR - 'snot" tror" (a logic Air Chit function designation) PCB - printed circuit board [used interchangeably with EWE in the text PGA - p in grid array P-g'ass - phosphosilicate glass used for chip passi~ra~ion POP - b~pc~la' dove ce ~ ayer structure (hole-rich layer/electron-rich lay er~hole - rich layer) ~ bars Astor P-H - pi Ted through holes PUB - pro need wi.~ir~5 board fused interchangeably with PCB in the text

OCR for page 105
107 RIE - reactive ion etching RISC - reduced instruction set computer (or processor) SMA - surface -mount assembly SCM - single chip modules S RAM - static random access memory TAB - tape automated bonding TCE - thermal coefficient of expansion Acts [see "CTE" ~ Via - a conducting through path perpendicular to the plane of the substrate ~ see also blind via ~ NISI - wafer- scale integration

OCR for page 105