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Appendix E
MATERIALS PROPERTIES
In the course of preparation of this report, information on packaging
and interconnection structures and the materials employed has been compiled.
Some materials properties are listed in the accompanying tables E-1 through
E-3. Sources of these data ranged from original literature to review
articles, monographs, and handbooks, too numerous to be listed here. The
reader is reminded that property data found in these reports vary widely, so
the values listed should be regarded as representative and indicative of what
properties are available for packaging design and manufacture. A recommended
source of data for important packaging materials is the "American Institute of
Physics Handbook, " McGraw-Hill Book Company, New York, an annual publication.
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125
TABLE E-1 Interconnection and Packaging Materials: Metals
. .
M. P. p 0
Material ( C) (grtcm3) (n-cm)
TCE ~
(ppm/ C) (W/cm C) Uses
aluminum 660 2.72.6xlO-6 23 2.1 Chip conductor and wire bonds
Gold 1063 19.32.4xlO 6 14 3.4 Hybrid conductor and wire bonds
Copper 1083 8.91.7x10-6 17 3.8 Lead frame and hybrid, Pea, and conductor
Lead 327 112x10-5 29 0.3 Solder attach
Nolybdenum 2610 104.8xlO-6 4 1.3 Co-fired on ceramic conductor
Tungsten 3380 195.5x10-6 4 1.5 Co-fired on ceramic conductor
TABLE E-2 Interconnect i on and Packag i ng Mater i a l s: Organ i c
max use temp p a' a" a TCE He
~ C) (gr/cm3) - - (SI-cm) (pprn/ C] (~/cm C) Uses
Epoxy (70% SiO2) 170 1.8 3.8 0.034X1016 20 0.002 Packaging
Epoxy glass (FR-4} 120 1.9 4-5 0.05loll 15 0.02 Multilayer Board Substrate
Adv. epoxy (resin only) 180 1.2 3.7 0.02told 55 0.02 Multilayer Board Substrate
Triazine 250 1.26 3.1 0.001>1013 50 0.002 Hybrid dielectric
'3T resin (laminate) 290 1.28 4.0 0.01lol5 15 0.005 Flexible Substrate
Polyimide 400 1.42 3.6 0.011ol6 50 0.0007 Flexible Substrate
Polyimide 310 1.4 3.5-5 0.011ol6 50 0.0007 Interlayer Dielectric
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TABLE E-3 Interconnection and Packag
sing Materials: Inorganics
max use temp p a' e"
o TCE
Material ~ C) (gr/cm3) - - (~-cm C) (ppm/ C] (W/cm C) Uses
Alumina (ceramic) 1,600 4.0 9.5 0.003 1014 6.5 0.3 Hybrid substrates/chip carriers
Silica (fused) 1,100 2.2 3.8 <10-4 ,1ol7 0.6 0.02 Filler for molding epoxies
Si licon nitride 2,000 3 6 NM 1016 0.8 0.3 Candidate substrates
Aluminum nitride 1,800 3.3 8.9 0.004 lo13 4.5 3.2 Candidate substrates
Silicon carbide 2,100 3.2 40 0.2 1013 3 7 2.7 Candidate substrates
Silicon 1,400 2.3 12 NM V 2.6 1.5 Candidate substrates
Diamond >3,500 3.5 5.7 NM >102° 0.9 20 Candidate encapsulation
Glass-ceramic >1,000 >4 7-10 NM V >3 0.05 Candidate substrates
Beryllia 1,500 3 7 10-3 lol4 6 2.6 Chip carriers
_ ..
NM = not meaningful
V = varies with composition and impurity level
Representative terms from entire chapter:
flexible substrate
