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Appendix F EXAMPLES OF MULTICHIP MODULES Chip modules have increased over the years in operating capability and complexity, and the demands on the materials employed have increased accordingly; these are discussed in Chapter 3. Some examples of multichip modules are shown in the accompanying figures, E-1 through E-7. These were based on figures found in the literature] and sketches furnished by IBM and the General Electric Company. The diversity of detail illustrates that work in this area is being pursued widely. The figures are presented here as being representative of the advancements in the state of the art of module design and manufacture. Many similarities can be discerned. Johns on, Wayne Nepcon, p. 655. 1989. Thin Film Multichip Hybrids: 127 An Overview. Proc.

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129 LEAD ,~ - ~ ~ , FRAME I ~ SiC we ~ _) CERAMIC Sl CON SUBSTRATE (METALLIZED) MULLITE \ Figure F-1 Ceramic package developed by Hitachi for Silicon Substrate. (After Johnson*) *Wayne Johnson, Proc. Nepcon, 655 (1989) . UNSOLDER ALUMINUM ~ 1 : \\\\\\\\\\\\\~\\\\\~\\\\\\\\\\\\\\S\\\~\,~,-~,~,~ - METAL OXIDE Figure F-2 Silicon-based multichip module developed by Hitachi for ECL RAM. (After Johnson*) *Wayne Johnson, Proc. Nepcon, 655 (1989~.

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130 CHIP ~ ~ L w~ w~ POLYIMIOE SIGNAL CERAMIC Figure F-3 Thin film on co-fired ceramic multichip module developed by NEC (After Johnson*) *Wayne Johnson, Proc. Nepcon, 655 (1989~. POWER SIGNAL CONNECTORS . . _ . @ =~8 ~ 3Oo~o~o~s 888 ~ D000O Qua ~ 38880 o cooug2oa Fi z ~ ~ ~ _~-vO=~ 1 ~- 30~000O 1 - OQUOODOO. D0000 OUT ~OOOQ AQUA OCOOO O0Q i OOOQ OO0. OnO nOOOnQO IO08OaQaoOO.~! z' ,,8 ~nnnonnno ' ~9= W_ . l ID OOGOOOO0Q oomO 8~9 Of ~ lOO.~Q OOW.~.Q ouoosauua nnn~F,~n~rn / ~ Figure F-4 Three-dimensional assembly of GaAs modules developed by NEC. (After Johnson*) *Wayne Johnson, Proc. Nepcon, 655 (1989) .

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131 0> ADHESIVE t POLYIMIC ` COPPER SILICON SUBSTRATE IF . . . . AIN SUBSTRATE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. .. ..; ... . .. . . ... :: AIN SUBSTRATE . . .. ... .. _ rCMOS EPOXY POLYIMIDE COPPER tOVER SILICON) Figure F-S Multichip module developed by Toshiba. (After Johnson*) *Wayne Johnson, Proc. Nepcon, 655 (1989~.

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COVER ASSEMBLY ~ 132 ~ JACKET on ~ ~HELIUM FILL PORT ~,[ LSI CHIPPED 1 FLANGE:~~9Omm x 90mm CYLINDER~CC SUBSTRATE BASE PLATE Figure F-6 Thermal condition module developed by IBM. (Courtesy of IBMCorp. ~

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133 -1/0 PlN 80ND ~ PWR / GND / =._~'w-~ - ' ~1 i_ Air KOVAR I~ ALUMINA CANSUBSTRAT FRAME Figure F-7 Cross section of GE modul E (Courtesy of General Electric Co.)

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