Click for next page ( 72


The National Academies | 500 Fifth St. N.W. | Washington, D.C. 20001
Copyright © National Academy of Sciences. All rights reserved.
Terms of Use and Privacy Statement



Below are the first 10 and last 10 pages of uncorrected machine-read text (when available) of this chapter, followed by the top 30 algorithmically extracted key phrases from the chapter as a whole.
Intended to provide our own search engines and external engines with highly rich, chapter-representative searchable text on the opening pages of each chapter. Because it is UNCORRECTED material, please consider the following text as a useful but insufficient proxy for the authoritative book pages.

Do not use for reproduction, copying, pasting, or reading; exclusively for search engines.

OCR for page 71
References Acheson, E.G. 1893. Journal of the Franklin Institute. September: 194. Adesida, I., A. Mahajan, E. Andideh, M.A. Khan, D.T. Olsen, and J.N. Kuznia. 1993. Reactive ion etching of gallium nitride in silicon tetrachloride plasmas. Applied Physics Letters 63~201: 2777- 2779. Alok, D., M. Bhatnagar, H. Nakanishi, B.J. Baliga, Y. Chang, and R.F. Davis. 1993. 3C- monocrystalline SiC reactive ion etching using SF6/O2. Pp. 585-587 in Proceedings of the 5th International Conference on Silicon-Carbide and Related Materials. M.G. Spencer, R.P. Devaty, J.A. Edmond, M. Asif Khan, R. Kaplan, and M. Rahman, eds. Institute of Physics Conference Series #137. Bristol, England: Institute of Physics Publishing. Amano, H., M. Kito, K. Hiramatsu, and I. Akasaki. 1989. P-type conduction in Mg-doped GaN treated with low-energy electron beam irradiation. Japanese Journal of Applied Physics 28(12.2):L2112-L2114. Anthony, T. 1994. Personal Communication to W.J. Choyke. Arbab, A., A. Spetz, Q. ul Wahab, M. Willand, and I. Lundstrom. 1993. Chemical sensors for high temperatures based on silicon carbide. Sensors and Materials 4~41:173-185. Baliga, B.J. 1982. Semiconductors for high-voltage, vertical channel FET's. Journal of Applied Physics 53:1759-17640 Balooch, M., and D.R. Olander. 1992. Etching of silicon carbide by chlorine. Surface Science 261~1- 3~:321-324. Beasom, I.D., and R.B. Patterson. 1982. Process characteristics and design methods for a 300 C 71 quad operational amplifier. IEEE Transactions on Industrial Electronics IE-29~2~: 112-117. Benjamin, M.C., C. Wang, R.F. Davis, and R.J. Nemanich. 1994. Observation of Negative Electron Affinity of Heteroepitaxial A1N on 6H SiC. PaperDl.12. Paper presented at the spring meeting of the Materials Research Society, San Francisco, California, April 4. Berman, R., and M. Martinez. 1976. Diamond Research. Industrial Diamond Review. Berzelius, J.J. 1824. Annalen der Physik. B77:209. Bhatnagar, M., P.K. McLarty, and B.J. Baliga. 1992. Silicon-carbide high-voltage (400 V) Schottky barrier diodes. IEEE Electron Device Letters. 13~101:501-503. Binari, S.C., L.B. Rowland, G. Kelner, W. Kruppa, H.B. Dietrich, K. Doverspike, and D.K. Gaskill. 1994. DC, RF, and High-Temperature Characteristics of GaN FET Structures. Paper presented at the International Conference on Compound Semiconductors, San Diego, California, September 18-22. Bonn, P.A., and D.W. Palmer. 1980. 275 C thick film hybrid microcircuitry fabrication technology. Sandia National Laboratories Report, SAND80- 0078, UC-66b, March/July. Bose, B.K. 1993. Power electronics and motion control- technology status and recent trends. IEEE Transactions on Industry Applications 29~5~:902- 909. Bottner, T., K. Fricke, A. Gol&orn, H.L. Hartnagel, A. Rappl, S. Ritter, and J. Wurfl. 1991. Technology and performance of a high temperature stable operational amplifier on GaAs. Pp. 77-84 in Proceedings of the First International High-Temperature Electronics

OCR for page 71
Materials for High-Temperature Semiconductor Devices Conference, Albuquerque, New Mexico, June 16-20. Brown, D.M. 1993. Ion implantation and SiC Device Research and Development. Presentation to the Committee on Materials for High-Temperature Semiconductors, Washington, D.C., September 29. Brown, D.M., G. Gati, M. Ghezzo, J. Kretchmer, V. Krishnamurthy, and G. Michon. 1994. High Temperature Silicon Carbide Planar IC Technology and First Monolithic SiC Operational Amplifier IC. Paper presented at the Second International High-Temperature Electronics Conference, Charlotte, North Carolina, June 5- 10. Brown, R.B. 1991. Short Course Notes. First International High Temperature Electronics Conference, Albuquerque, New Mexico, June 16. Brown, R.B., F.L. Terry, and K-C Wu. 1994. High temperature microelectronics expanding the applications for smart sensors. Pp. 274-277 in Proceedings of the International Electron Devices Meeting. New York: IEEE Press. Chelikowsky, J.R., and S.G. Louie, 1984. First principles combination of atomic orbitals method for the cohesive and structural properties of solids application to diamond. Physical Review B Condensed Matter 26~61: 3470-3481. Chiao, Y.H., A.K. Knudsen, and I.F. Hu. 1991. Interfacial bonding in brazed and cofired aluminum nitride. ISHM Proceedings Pp. 460- 468. Chien, F.R., S.R. Nutt, W.S. Yoo, T. Kimoto, and H. Matsunami. 1994. Terrace growth and polytype development in epitaxial beta-SiC films on alpha- SiC (6H and l5R) substrates. Journal of Materials Research 9~4~:940-954. Chitale, S.M., C. Huang, and S.J. Sten. 1994. ESL thick-film materials for AlN. Advancing Microelectronics 21~11:22-23. Chow9 T.P., and R. Tyagi. 1994. Wide bangap compound semiconductors for superior high- voltage unipolar power devices. IEEE Transactions on Electron Devices 41~8~:1481- 1483. 72 Choyke, W.J., and I. Linkov. 1993. A short atlas of luminescence and absorption lines and bands in SiC, GaN, AlGaN and A1N. Pp. 141-146 in Proceedings of the 5th International Conference on Silicon-Carbide and Related Materials. M.G. Spencer, R.P. Devaty, J.A. Edmond, M. Asif Khan, R. Kaplan, and M. Rahman, eds. Institute of Physics Conference Series #137. Bristol, England: Institute of Physics Publishing. Christenson, D. 1991. High temperature electronics for supersonic aircraft. Final Report on Workshop on High Temperature Electronics, June 6-8. 1989, Albuquerque, New Mexico. SAND91- 0370. Albuquerque, New Mexico: Sandia National Laboratories. Chu, T.L., D.W. Ing, and A.J. Noreika. 1967. Epitaxial growth of aluminum nitride. Solid State Electron 10~10231:67. Clarke, R.C., R.H. Hopkins, C.D. Brandt, M.C. Driver, D.L. Barrett, A.A. Burk, G.W. Eldridge, H.M. Hobgood, J.P. McHugh, P.G. McMullin, R.R. Siergiej, and S. Sriram. 1993. Paper presented at the 1993 IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits. Crofton, J.B., C.S. Patuwathavithane, P.A. Barnes, J.R. Williams, M.J. Bozack, C.C. Tin, J.A. Spitznagel, P.G. McMullin, D.L. Barrett, R.H. Hopkins, and R.G. Seidensticker. 1991. Metallization Studies at Elevated Temperatures on SiC Substrates and Epitaxial Layers. Paper presented at the First International High Temperature Electronics Conference, Albuquerque, New Mexico, June 16-20. Crofton, J.B., J.R. Williams, M.J. Bozack, and P.A. Barnes. 1993. A TiW high-temperature Ohmic contact to e-type 6H-SiC. Pp. 719-722 in Proceedings of the Fifth Conference on Silicon Carbide and Related Materials. M.G. Spencer, R.P. Devaty, J.A. Edmond, M. Asif Khan, R. Kaplan, and M. Rahman, eds. Institute of Physics Conference Series #137. Bristol, England: Institute of Physics Publishing. Crofton, J.B., J.R. Williams, M.J. Bozack, and E.D. Luckowski. 1994. The Effect of Silicide Stoichiometry on the Ni Ohmic Contact to n

OCR for page 71
References Type 6H-Silicon Carbide. Paper presented at the Second International High Temperature Electronics Conference, Charlotte, North Carolina, June 5-10. Davies, G. 1994. Optical spectroscopy of defects in diamond: current understanding and future problems. Pp. 21-28 in Proceedings of the 17th International Conference on Defects in Semiconductors, Gmunden, Austria, July 18-23. Davis, R.F. 1992. Diamond Films and Coatings. Park Ridge, N.J.: Noyes Publications. Davis, R.F. 1993. Bulk crystals, thin rims and devices of the wide band gap semiconductors of silicon carbide and the III-V nitrides of aluminum, gallium and iridium. Pp. 1-6 in Proceedings of the Fifth Conference on Silicon-Carbide and Related Materials. M.G. Spencer, R.P. Devaty, J.A. Edmond, M. Asif Khan, R. Kaplan, and M. Rahman, eds. Institute of Physics Conference Series #137. Bristol, England: Institute of Physics Publishing. Davis, R.F., G. Kelner, M. Shur, J.W. Palmour, and J.A. Edmond. 1991. Thin film deposition and . . . . microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide. Proceedings of the IEEE 79~51: 677-701. Deal, B.E., and A.S. Grove. 1965. General relationship for thermal oxidation of silicon. Journal of Applied Physics 36(3770):65. Dell'Acqua9 R., and M. Marelli. 1990. Hybrid circuits in automotive applications. Hybrid Circuit Technology 7~5~:22-29. Dimitriev, V.A., K.G. Irvine, M.G. Spencer, and I.P. Nikitina. 1994. Heteroepitaxial growth of SiC on AlN by chemical vapor deposition. Pp. 67-70 in Proceedings of the Fifth Conference on Silicon Carbide and Related Materials. M.G. Spencer, R.P. Devaty, J.A. Edmond, M. Asif Khan, R. Kaplan, and M. Rahman, eds. Institute of Physics Conference Series #137. Bristol, England: Institute of Physics Publishing. Draper, B.L., and D.W. Palmer. 1979. Extension of high-temperature electronics. IEEE Transactions on Components, Hybrids, and Manufacturing Technology CHMT-2~41:399-404. 73 Eden, R. 1994. Gallium arsenide and high-temperature packaging. Presentation to the Committee on Materials for High-Temperature Semiconductor Devices. Washington, D.C., February 10-11. Edmond, J.A., D.G. Waltz, S. Brueckner, H.S. Kong, J.W. Palmour, and C.H. Carter, Jr. 1991. High temperature rectifiers in 6H-silicon carbide. Pp. 499-505 in Proceedings of the First International High Temperature Electronics Conference, D.B. King and F.V. Thome, eds. Efremow, N.N., M.W. Geiss, D.C. Flanders, G.A. Lincoln, and N.P. Economou. 1985. Ion-beam assisted etching of diamond. Journal of Vacuum Science & Technology B3~1~:416-418. Fazi, C., M. Dudley, S. Wang, and M. Ghezzo. 1993. Issues associated with large area SiC diodes with avalanche breakdown. Pp. 487-490 in Proceedings of the 5th International Conference on Silicon-Carbide and Related Materials. M.G. Spencer, R.P. Devaty, J.A. Edmond, M. Asif Khan, R. Kaplan, and M. Rahman, eds. Institute of Physics Conference Series #137. Bristol, England: Institute of Physics Publishing. Fendrock, J.J., and L.M. Hong. 1990. Parallel-gap welding to very-thin metallization for high temperature microelectronic interconnects. IEEE Transactions on Components, Hybrids, and Manufacturing Technology 13~2~:376-382. Foresi, J.S., and T.D. Moustakas. 1993. Metal contacts to gallium nitride. Applied Physics Letters 62(22):2859-2861. Foyt, A.G. 1994. High Temperature Electronic Materials Device Testing. Presentation to the Committee on Materials for High-Temperature Semiconductor Devices, Washington, D.C., February 10-11. Frank, R., and R. Valentine. 1990. Power FETs cope with the automotive environment. PCIM February:33-39. Fung, C.D., and J.J. Kopanski. 1984. Thermal oxidation of 3C silicon-carbide single crystal layers on silicon. Applied Physics Letters 45(7):757-759. Ghezzo, M., D.M. Brown, E. Downey, J. Kretchmer, W. Hennessy, D.L. Polla, and H. Bakhru. 1992. Nitrogen-implanted SiC diodes using high-temperature implantation. IEEE Electron Device Letters 13~121639-641.

OCR for page 71
Materials for High-Temperature Semiconductor Devices Ghezzo, M., D.M. Brown, E. Downey, J. Kretchmer, and J.J. Kopanski. 1993. Boron-implanted 6H- SiC diodes. Applied Physics Letters 63~91: 1206- 1208. Grzybowski, R.R. 1991. Development of 600 C Device Test Fixturing. Transactions of the First International High Temperature Electronics Conference, Albuquerque, New Mexico, June 16-20. Grzybowski, R.R., and S.M. Tyson. 1993. High temperature testing of SOI devices to 400C. Pp. 176-177 in IEEE International SOI Conference Proceedings, Palm Springs, California, October 5-7. Harman, G.G. In Press. Introduction to diffusion, intermetallic compounds and other metallurgical problems in high-temperature electronics with emphasis on first-level packaging. In High- Temperature Electronics. R.K. Kirscham, ed. New York: IEEE Press. Hemstreet, L.A., and C.Y. Fong. 1974. Pp. 284-297 in Silicon Carbide. 1973. R.C. Marcshall, J.W. Faust, and C.E. Ryan, eds. South Carolina: University of South Carolina Press. Hingorani, N.G., and K.E. Stahlkopf. 1993. High power electronics. Scientific American 269~51:78-85. Hobgood, H.M. 1993. Growth of large diameter SiC crystals. Presentation to the Committee on the Study of Materials for High-Temperature Semiconductor Devices, Washington, D.C., September 29-30. Ivanov, P.A., and V.E. Chelnokov. 1992. Recent developments in SIC single-crystal electronics. Semiconductor Science and Technology 7:863-880. Johnson, E.O. 1965. Physical limitations on frequency and power parameters of transistors. RCA Review 26:163-177. Johnson, R.W. In Press. Hybrid assembly and packaging. In High Temperature Electronics. R.K. Kirscham, ed. New York: IEEE Press. Jurgens9 R.F. 1982. High-temperature electronics applications inL space exploration. IEEE Transactions on Industrial Electronics 29~21: 107 ~ang9 S., P. Neudeck, J. Petit, and M. Tabib-Azar. 1993. Measurement of [ast and slow interface 74 traps in e-type dry thermally oxidized 6H-SiC MOS diodes by high-frequency and quasi-static C-V techniques. Pp. 633-636 in Proceedings of the 5th International Conference on Silicon- Carbide and Related Materials. Philadelphia: Institute of Physics Publishing. Keith, E. 1990. Future packaging technologies for hybrid electronics in the automotive underhood environment. Hybrid Circuit Technology 7~51: 12-16. Kelner, G., M.S. Shur, S. Binari, K.J. Sleger, and H.S. Kong. 1989. High-transconductance beta SiC buried gate JFETS. IEEE Electron Devices Letters 36~61: 1045-1049. Keyes, R.W. 1972. Figure of Merit for semiconductors for high-speed switches. Proceedings of the IEEE 60~21: 225. Khan, M.A., A. Bhattarai, J.N. Kuznia, and D.T. Olson. 1993a. High-electron-mobility transistor teased on a GaN-AlXGAl-XN heterojunction. Applied Physics Letters 63~91:1214-1215. Khan, M.A., J.N. Kuznia, A.R. Bhattra, and D.T. Olson. 1993b. Metal-semiconductor field effect transistor based on single crystal GaN. Applied Physics Letters 62~151:1786-1787. Khan, M.A., J.N. Kuznia, D.T. Olson, W.J. Schiff, and J. Burn. In Press. Microwave. Knippenberg, W.F. 1963. Philips Research Reports 18~31: 161-274. Knoll, G.F. 1989. Radiation Detection and Measurements, 2nd ed. New York: John Wiley & Sons. Koga, K., Y. Fujikawa, Y. Ueda, and T. Yamaguchi. 1992. Growth and characterization of 6H-SiC bulk crystals by the sublimation method. Pp. 96-100 in Amorphous and Crystalline Silicon Carbide IV, Vol. 71. C.Y. Yang, M.M. Rahman, and G.L. Harris, eds. Berlin and Heidelberg: Springer-Verlag. Kordina, O., J.P. Bergman, A. Henry, and E. Janzen. 1995. Long minority carrier lifetimes in 6H-SiC grown by chemical vapor deposition. Applied Physics Letters 66~22~:189-191. Kueser, P.E. 1965-1966. Development and evaluation of magnetic and electrical materials capable of operating in the 800-1600 F temperature range.

OCR for page 71
References Westinghouse Electric Corporation Quarterly Reports. NASA-CR-54354 to 60. Lambrecht, W.R., and B. Segall. 1992. A comparison of wurtzite and zincblende band structures for SiC, A1N, and GaN. Pp. 367-373 in the Proceedings of the Materials Research Society Symposium on Wide Bandgap Semiconductors. T.D. Mostaksas, J.I. Pankove, and Y. Hamakawa, eds. Philadelphia: Elsevier Science. Larkin, D.J., P.G. Neudeck, J.A. Powell, and L.G. Matus. 1993. Site-competition epitaxy for controlled doping of CVO silicon carbide. Pp. 155-159 in Proceedings of the 5th International Conference on Silicon-Carbide and Related Materials. M.G. Spencer, R.P. Devaty, J.A. Edmond, M. Asif Khan, R. Kaplan, and M. Rahman, eds. Institute of Physics Conference Series #137. Bristol, England: Institute of Physics Publishing. Laukhe, Y., Y.M. Tairov, V.F. Tsvetkov, and F. Schepanksi. 1981. Oxidation-kinetics of SiC single-crystals. Inorganic Materials 17~2~:177- 179. Lee, R., C. Ito, B. Johnson, G. Trombley, R. Reston, M. Mah, and C. Havasy. 1995. High- temperature characteristics of GaAs MESFET devices fabricated with AlAs buffer layer. IEEE Electron Device Letters 16~61. Lely, J.A. 1955. Darstellung von einkristallen von silicium carbid und beherrschung von art und menge der eingebautem verunreingungen. Ber. Deut. Keram. Ges. 32:229-236. Licari, J.J., and L.R. Enlow. 1988. Hybrid Microcircuit Technology Handbook. Park Ridge, New Jersey: Noyes Publications. Lin, M.E., Z.F. Fan, L.H. Allen, and H. Morkoc. 1994. Low resistance contacts on wide-bandgap GaN. Applied Physics Letters 64~81:1003-1005. Lo, T.C., and H-C. Huang. 1992. Japanese Journal of Applied Physics 31~11:4061. Look, D. 1989. Electrical Characterization of GaAs Materials and Devices. New York: John Wiley & Sons. MacKay,, C.A. 1991. Bonding amalgam and method making. United States patent 5,053,195. October 75 Maier, K, H.D. Muller, and J. Schneider. 1992. Materials Science Forum 83-87: 1183-1194. Marsh, O.J., and H.L Dunlap. 1970. Radiation Effects 6:301. Matsunami, H., K. Shibahara, N. Kuroda, W. Yoo, and S. Nishino 1989. VPE growth of SiC on step-controlled substrates. Pp. 34-59 in Amorphous and Crystalline Silicon Carbide. G.L. Harris and C.Y.-W. Yang, eds. Berlin and Heidelberg: Springer-Verlag. McGarrity, J.M., R.E. Oakley, W.M. Delancey, and F.B. McLean. 1992. Displacement damage effects in SiC JFETs as a function of temperature. Proceedings of the 10th Symposium on Space and Nuclear Power and Propulsion. Migitaka, M., and K. Kurachi. 1994. Silicon integrated injection logic operating up to 454 C. Pp. 26-32 in Transactions of the 2nd International High Temperature Electronics Conference. D.B. King and F.V. Ihome, eds. Charlotte. Miller, T. 1987. Small motor drives expand their technology horizons. Power Engineering Journal September:283-289. Moisson, H. 1904. Compt Rend. 139:773-780. Moisson, H. 1905. Compt Rend. 140:405-406. Morkoc, H., S. Strite, G.B. Gao, M.E. Lin, B. Sverdlov, and M. Burns. 1994. A review of the large bandgap SiC, III-V nitride, and ZnSe based II-VI semiconductor device technologies. Journal of Applied Physics Review 76~3~:1363-1398. Motz, P.R., and W.A. Vincent. 1984. Automotive electronics: designing custom ICs for a harsh environment. Journal of Semicustom ICs 2~21:5- 12. Nakamura, S. 1991. GaN growth using GaN buffer layer. Japanese Journal of Applied Physics 30:1998. Nakamura, S., N. Iwasa, M. Seno, and T. Mukai. 1992. Hole compensation mechanism of P-type GaN films. Japanese Journal of Applied Physics 31~5A): 1258-1266. Neudeck, P.G., and J.A. Powell. 1994. Performance limiting micropipe defects in silicon carbide wafers. IEEE Electron Device Letters 15~2~:63-65. Neudeck, P.G., D.J. Larkin, J.E. Starr, J.A. Powell, C.S. Salupo, and L.G. Matus. 1993. Greatly improved 3C-SiC pen junction diodes grown by

OCR for page 71
Materials for High-Temperature Semiconductor Devices chemical vapor deposition. IEEE Electron Device Letters 14~31:136-139. Nieberding, W.C., and J.A. Powell. 1982. High- temperature electronic requirements in aeropropulsion systems. IEEE Transactions on Industrial Electronics IE-29~2~: 103-106. Nishino, S., J.A. Powell, and H.A. Will. 1983. Production of large-area single-crystal wafers of cubic SiC for semiconductor devices. Applied Physics Letters 42~51:460-462. NRC (Nuclear Regulatory Commission). 1993. Research Publication GR-0005, Volume 2, Part 1. Washington, D.C.: U.S. Department of Energy. Padiyath, R., R.L. Wright, M.I. Chaudhry, and S.V. Babu. 1991. Reactive ton etching or monocrystall~ne, polycrystall~ne, and amorphous- silicon carbide in CF4/O2 mixtures. Applied Physics Letters 58~101:1053-1055. Palmer, D.W. In Press. High-temperature electronics packaging. In High Tempemperature Electronics. R.K. Kirscham, ed. New York: IEEE Press. Palmer, D.W., and R.C. Heckman. 1978. Extreme temperature range electronics. IEEE Transactions of Components, Hybrids, and Manufacturing Technology CHMT-1:333-340. Palmour, J.W. 1993. Design and Fabrication of SiC Devices. Presented to the Committee on Materials for High Temperature Semiconductor Devices, Washington, D.C., September 30. Palmour, J.W., S. Kong, D.G. Waltz, J.A. Edmond, and C.~. Carter. 1991. 6H-SiC transistors for high temperature operation. Pp. 511-518 in Transactions of the First International High Temperature Electronics Conference. Pan, W.Z., and A.J. Steckl. 1990. Journal of the Electrochemical Society 137:212. Pandy, D., and P. Krishna. 1983. Pp. 213-258 in Crystal Growth and Characterization of Polytype Structures, P. Krishna, ed. London: Pergamon Press. Parsons, J.D. 1987. Single crystal epitaxial growth of beta-SiC for device and integrated circuit applications. Pp. 271-282 in Novel Refractory Semiconductors. D. Emin, T.L. Aselage, and C. Wood, eds. Pittsburgh, Pennsylvania: Materials Research Society. ~ . 76 Patrick, L.A., and W.J. Choyke. 1974. Physics Review B 10:5091. Pearton, S.J., C.R. Abernathy, F. Ren, J.R. Lothian, P.W. Wisk, and A. Katz. 1993. Dry and wet etching characteristics of InN, A1N, and GaN deposited by electron-cyclotron resonance metalorganic molecular beam epitaxy. Journal of Vacuum Science&Technology 11~41:1772-1775. Pedder, D.J. 1988. Flip chip solder bonding for microelectronic application. Hybrid Circuits 15:4-11. Pensl, G., and W.J.Choyke. 1993. Electrical and optical characterization of SiC. Physica B 185~1-41:264- 283. Perlin, A. 1993. Physical properties of single crystals of III-V nitrides grown by a high-pressure, high- temperature method. Bulletin of the American Physical Society 38~11:445. Petit, J.B., P.G. Neudeck, L.G. Matus, and J.A. Powell. 1992. Thermal oxidation of single-crystal silicon carbide: kinetic, electrical and chemical studies. Pp. 190-196 in Proceedings of Amorphous and Crystalline Silicon Carbide IV, Springer Proceedings in Physics, Vol. 71. New York: Springer-Verlag Plano, M.A., M.D. Moyer, and M.M. Moreno. 1994. CVD diamond MESFET. Paper presented at the Second International High Temperature Electronics Conference, Charlotte, North Carolina, June 5-10. Porter, L.M., R.F. Davis, J.S. Bow, M.J. Kim, and R.W. Carpenter. 1993. Deposition and characterization of Schottky and ohmic contacts on e-type alpha (6H)-SiC (00011. Pp. 581-584 in Proceedings of the 5th International Conference on Silicon-Carbide and Related Materials. M.G. Spencer, R.P. Devaty, J.A. Edmond, M. Asif Khan, R. Kaplan, and M. Rahman, eds. Institute of Physics Conference Series #137. Bristol, England: Institute of Physics Publishing. Porter, L.M., R.F. Davis, J.S. Bow, and M.J. Kim. 1995a. Chemistry, microstructure, and electrical properties at interfaces between thin films of cobalt and alpha (6H) silicon carbide (00011. Journal of Materials Research 10~1~:26-33. Porter, L.M., R.F. Davis, J.S. Bow, and M.J. Kim. 1995b. Chemistry, microstructure, and electrical

OCR for page 71
References properties at interfaces between thin films of titanium and alpha (6H) silicon carbide (0001~. Journal of Materials Research 10~31:668-679. Powell, J.A. 1993. Presentation to the Committee on Materials for High-Temperature Semiconductors, Washington, D.C. Powell, J.A., and L.G. Matus. 1989. Pp. 2-12 in Springer Proceedings in Physics. G.L. Harris and C.Y-W Yang, eds. Berlin and Heidelberg: Springer-Verlag . Powell, J.A., L.G. Matus, and M.A. Kuczmarski. 1987. Growth and characterization of cubic SiC single-crystal films, Si. Journal of the Electrochemical Society 134~6~:1558-1565. Powell, J.A., J.B. Petit, J.H. Edgar, I.G. Jenkins, L.G. Matus, J.W. Yang, P. Pirouz, W.J. Choyke, L. Clemen, and M. Yoganathan. 1991. Controlled growth of 3C-SiC and 6H-SiC films on low-tilt-angle vicinal (0001) 6H-SiC wafers. Applied Physics Letters 59~31:333-335. Powell, J.A., D.J. Larkin, P.G. Neudeck, J.W. Yang, and P. Pirouz. 1994. Investigation of defects in epitaxial 3C-SiC, 4H-SiC and OH-SIC films grown on SiC substrates. Pp. 161-164 in Silicon Carbide and Related Materials: Proceedings of the Fifth International Conference. M.G. Spencer, R.P. Devaty, J.A. Edmond, M.A. Shor. Kahn, R. Kaplan, and M. Rahman, eds. Bristol, England: Institute of Physics Publishing. Prinz, J. 1994. Presentation at the Spring Meeting of the American Physical Society, Pittsburgh, Shur' Pennsylvania. Ridley, B.K. 1993. Quantum Processes in Semiconductors. Oxford, England: Oxford University Press. Rivard, J. 1986. Schematic of a hypothetical drive-by wire system for an automobile with computerized traction control steering and suspension. Pp. 20 22 in Proceedings of the International Congress on Transportation Electronics. Warrendale, Pennsylvania: Society of Automotive Engineers. Roesch9 W.J. 19880 Gallium arsenide IC reliability. Singh Tutorial Presentation at the International Reliability Physics Symposium. Monterey, California. April. Rutz, R.F. 1976. Ultraviolet electrolum~nescence in A1N. Applied Physics Letters 28~71:379-381. 77 Sampson, R.N., and D.N. Mattox. 1991. Materials for electronic packaging. In Electronic Packaging and Interconnection Handbook. Ch. A. Harper, ed. New York: McGraw-Hill, Inc. Schadt, M., G. Pensl, R.P. Devaty, W.J. Choyke. 1994. Anisotropy of the electron Hall mobility in 4H, 6H, and l5R silicon carbide. Applied Physics Letters 65~241:3120-3122. Schaffer, W.J., H.S. Kong, G.H. Negley, and J.W. Palmour. 1994. Pp. 155-159 in Proceedings of the 5th International Conference on Silicon- Carbide and Related Materials. M.G. Spencer, R.P. Devaty, J.A. Edmond, M. Asif Khan, R. Kaplan, and M. Rahman, eds. Institute of Physics Conference Series #137. Bristol, England: Institute of Physics Publishing. Shail~, A. 1994. Thick-film pastes for A1N substrates. Advancing Microelectronics 21~11:18-21. Shenai, K., R.S. Scott, and B.J. Baliga. 1989. Optimum semiconductors for high-power electronics. IEEE Transactions on Electron Devices 36~2~: 1811-1823. Shenoy, K.V., C.G., Fonstad, Jr., and J.M. Mikkelson. 1994. High temperature stability of refractory- metal VLSI GaAs MESFETs. IEEE Electron Device Letters 15~3~:106-108. J.S., L. Bemis, and A.D. Kurtz. 1994. Characterization of monolithic e-type 6H-SiC piezoresistive sensing elements. IEEE Transactions on Electron Devices 41~51:661-665. M., B. Gelment, C. Saavedra-Munoz, and G. Kelner. 1993. Potential of wide bandgap devices for high-temperature applications. Pp.465-470 in Proceedings of the 5th International Conference on Silicon-Carbide and Related Materials, Washington, D.C., November 1-3. Philadelphia, Pennsylvania: Institute of Physics Publishing. Sinclair, P. 1979. Service company needs. Pp. 27-38 in High Temperature Electronics and Instrumentation Seminar Proceedings, Houston, Texas, December 3-4. N., and A. Rys. 1993. Thermal oxidation and electrical propert~es of silicon carbide metal- oxide-semiconductor structures. Journal of Appl~ed Physics 73~31:1279-1283. Skira, C.A., and M. Agnello. 1992. Control systems for the next century9s fighter engines. Journal of

OCR for page 71
Materials for High-Temperature Sem~coruluctor Devices Engineering for Gas Turbines and Power Tillman, K.D., and T.J. Ikeler. 1992. Integrated 114~0ctober):749-754. Slack, G.A. 1964. Thermal conductivity of pure and impure silicon, silicon carbide, and diamond. Journal of Applied Physics 35~121:3460. Slack, G.A., and S.F. Bartram. 1975. Thermal expansion of some diamond-like crystals. Journal of Applied Physics 46~1189-98. Spear, K.E., and J.P. Dismukes. 1994. Synthetic Diamond. New York: John Wiley & Sons. Spitznagel, J.A. 1994. Personal communication to W.J. Choyke. Rough Cost Estimates for SiC Electronics in Nuclear Applications. May 28. Strite, S., and H. Morkoc. 1992. GaN, A1N and InN: a review. Journal of Vacuum Science and Technology B 10~41:1237-1266. Sze, S.M. 1981. Physics of Semiconductor Devices, 2nd ed. New York: John Wiley & Sons. Tairov, Y.M., and V.E. Chelnekov. 1994. Personal Communication to W.J. Choyke. Tairov, Y.M., and V.F. Tsvetkov. 1978. Journal of Crystal Growth 43:209. Tairov, Y.M., and V.F. Tsvetkov. 1981. Journal of Crystal Growth 52: 146. Tairov, Y.M., and V.F. Tsvetkov. 1983. Progress in controlling the growth of polytypic crystals. Pp. 111-162 in Crystal Growth and Characterization of Polytype Structures. P. Krishna, ed. Oxford, England: Pergamon Press. Tairov, Y.M., I.I. Khlebnikov, and V.F. Tsvetkov. 1974. Investigation of silicon-carbide single crystals doped with scandium. Phys Stat Sol. 25(1):349-357. Takahashi, J., M. Kanaya, and Y. Fujiwara. 1994. Sublimation growth and characterization of SiC single crystalline ingots on faces perpendicular to a (0001) basal plane. Pp. 13-16 in Silicon Wang, Carbide and Related Materials: Proceedings of the Fifth International Conference. M.G. Spencer, R.P. Devaty, J.A. Edmond, M.A. Kahn, R. Kaplan, and M. Rahman, eds. Bristol, England: Institute of Physics Publishing. ~ornton, R.D. 1992. Power electronics for propulsion. Pp. 3-10 in Proceedings of the 7th Annual Applied Power Electronics Conference, APEC '92, Boston, Massachusetts. 78 flight/propulsion control for flight critical applications: a propulsion system perspective. Journal of Engineering for Gas Turbines and Power 114~0ctober):755-762. Tomana, M., R. Johnson, R. Wayne, R.C Jaeger, and W.C. Dillard. 1993. A hybrid silicon carbide differential amplifier for 350C operation. IEEE Transactions on Components, Hybrids, and Manufacturing Technology 16~51:536-542. Urushidani, T., S. Kobayashi, T. Kimoto, and H. Matsunami. 1993. High-voltage Au/6H-SiC Schottky barrier diodes. Pp. 471-474 in Proceedings of the 5th International Conference on Silicon-Carbide and Related Materials. M.G. Spencer, R.P. Devaty, J.A. Edmond, M. Asif Khan, R. Kaplan, and M. Rahman, eds. Institute of Physics Conference Series #137. Bristol, England: Institute of Physics Publishing. Veneruso, A.F. 1979. High temperature technology-- potential, promsie, and payoff. Pp. 17-26 in High Temperature Electronics and Instrumentation Seminar Proceedings, Houston, Texas, December 3-4. Verma, A.P., and P. Krishna. 1966. Polymorphism and Polytypism in Crystals. New York: John Wiley & Sons. Waldrop, J.R., and R.W. Grant. 1993. Schottky-barrier height and interface chemistry of annealed metal contacts to alpha-6H-SiC-crystal-face dependence. Applied Physics Letters 62(21):2685-2687. Waldrop, J.R., R.W. Grant, Y.C. Wang, and R.F. Davis. 1992. Metal Schottky-barrier contacts to alpha-6H-SiC. Journal of Applied Physics 72(10):4757-4760. C., K.S. Ailey, K.L. More, and R.F. Davis. 1993. Deposition of highly resistive, undoped and p-type, magnesium-doped gallium nitride films by modified gas source molecular beam epitaxy. Pp. 417-420 in Proceedings of the 5th International Conference on Silicon-Carbide and Related Materials. M.G. Spencer, R.P. Devaty, J.A. Edmond, M. Asif Khan, R. Kaplan, and M. Rahman, eds. Institute of Physics Conference Series #137. Bristol, England: Institute of Physics Publishing.

OCR for page 71
References Wurfl, J., B. Jankl, K.H. Rooch, and S. Thierbach. 1994. GaAs Microwave Devices Operating at High Ambient Temperatures: Technology and Performance. Paper presented at Second International High Temperature Electronics Conference, Charlotte, North Carolina, June 8. 79 Xie, W., J.A. Cooper, Jr., and M.R. Melloch. 1994. Monolithic NMOS digital integrated circuits in 6H-SiC. IEEE Electron Device Letters. 15~1 1~:455-457. Yang, J.W. 1993. SiC: problems in crystal growth and polytypic transformation. Ph.D. Thesis, Case Western Reserve University.

OCR for page 71