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Suggested Citation:"REFERENCES." National Research Council. 1996. Database Needs for Modeling and Simulation of Plasma Processing. Washington, DC: The National Academies Press. doi: 10.17226/5434.
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Page 39
Suggested Citation:"REFERENCES." National Research Council. 1996. Database Needs for Modeling and Simulation of Plasma Processing. Washington, DC: The National Academies Press. doi: 10.17226/5434.
×
Page 40

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HETEROGENEOUS PROCESSES 39 REFERENCES 1. M.W. Chase, Jr., C.A. Davies, J.R. Downey, Jr., D.J. Frurip, R.A. McDonald, and A.N. Syverud, JANAF Thermochemical Tables, 3rd edn., J. Phys. Chem. Ref. Data, suppl. 1 (1985). 2. H.F. Winters and J.W. Coburn, "Surface Science Aspects of Etching Reactions," Surf. Sci. Rep. 14:161 (1992). 3. K. Ono, T. Oomori, M. Tuda, and K. Namba, J. Vac. Sci. Technol. A 10:1071 (1992); C.C. Cheng, K.V. Guinn, V.M. Donnelly, and I.P. Herman, "In Situ Pulsed Laser-Induced Desorption Studies of the Silicon Chloride Layer During Silicon Etching in High Density Plasmas of C12/O2," J. Vac. Sci. Technol. A 12:2630 (1994); M. Hayerlag, G.S. Oehrlein, and D. Vender, "Sidewall Passivation During the Etching of poly-Si in an Electron-Cyclotron-Resonance-Plasma of HBr," J. Vac. Sci. Technol. B 12:96 (1994). 4. H.F. Winters and J.W. Coburn, "Surface Science Aspects of Etching Reactions," Surf. Sci. Rep. 14:161 (1992); J.W. Butterbaugh, D.C. Gray, and H.H. Sawin, J. Vac. Sci. Technol. B 9:1461 (1991); G.S. Oehrlein, Y. Zhang, D. Vender, and O. Joubert, "Fluorocarbon High Density Plasmas II: Silicon Dioxide and Silicon Etching Using CF4 and CHF3," J. Vac. Sci. Technol. A 12:333 (1994); S. Samukawa and K. Terada, J. Vac. Sci. Technol. B 12:3300 (1994); M.J. Goeckner, M.A. Henderson, J.A. Meyer, and R.A. Breun, J. Vac. Sci. Technol. A 12:3120 (1994). 5. S.M. Hart and E.S. Aydil, "Study of Surface Reactions During Plasma Enhanced Chemical Vapor Deposition of SiO2 from SiH4, O2, and Ar Plasma," J. Vac. Sci. Technol. A 14:2062 (1996). 6. E.R. Fisher, P. Ho, W.G. Breiland, and R.J. Buss, J. Phys. Chem . 96:9855 (1992). 7. G.S. Oehrlein, J.F. Rembetski, and E.H. Payne, J. Vac. Sci. Technol. B 8:1199 (1990). 8. H.F. Winters and J.W. Coburn, "Surface Science Aspects of Etching Reactions," Surf. Sci. Rep. 14:161 (1992). 9. K.P. Giapis, T.A. Moore, and T.K. Minton, "Hyperthermal Neutral Beam Etching," J. Vac. Sci. Technol. A 13:959 (1995). 10. S. Tachi, K. Tsujimoto, and S. Okudaira, "Low-Temperature Reactive Ion Etching and Microwave Plasma Etching of Silicon," Appl. Phys. Lett. 52:616 (1988). 11. A. Szabo and T. Engel, J. Vac. Sci. Technol. A 12:648 (1994). 12. H.F. Winters and J.W. Coburn, "Surface Science Aspects of Etching Reactions," Surf. Sci. Rep. 14:161 (1992). 13. A.M. Barklund and H.O. Blom, J. Vac. Sci. Technol. A 11:1226 (1993). 14. B.J. Garrison, "Molecular Dynamics Simulation of Surface Reactions," Chemical Society Reviews 21:155 (1992); H. Feil, J. Dieleman, and B.J. Garrison, J. Appl. Phys. 74:1303 (1993); M.E. Barone and D.B. Graves, J. Appl. Phys. 77:1263 (1995).

HETEROGENEOUS PROCESSES 40

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