National Academies Press: OpenBook

Materials for High-Density Electronic Packaging and Interconnection (1990)

Chapter: APPENDIX E: MATERIALS PROPERTIES

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Suggested Citation:"APPENDIX E: MATERIALS PROPERTIES." National Research Council. 1990. Materials for High-Density Electronic Packaging and Interconnection. Washington, DC: The National Academies Press. doi: 10.17226/1624.
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Page 123
Suggested Citation:"APPENDIX E: MATERIALS PROPERTIES." National Research Council. 1990. Materials for High-Density Electronic Packaging and Interconnection. Washington, DC: The National Academies Press. doi: 10.17226/1624.
×
Page 124
Suggested Citation:"APPENDIX E: MATERIALS PROPERTIES." National Research Council. 1990. Materials for High-Density Electronic Packaging and Interconnection. Washington, DC: The National Academies Press. doi: 10.17226/1624.
×
Page 125
Suggested Citation:"APPENDIX E: MATERIALS PROPERTIES." National Research Council. 1990. Materials for High-Density Electronic Packaging and Interconnection. Washington, DC: The National Academies Press. doi: 10.17226/1624.
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Page 126

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Appendix E MATERIALS PROPERTIES In the course of preparation of this report, information on packaging and interconnection structures and the materials employed has been compiled. Some materials properties are listed in the accompanying tables E-1 through E-3. Sources of these data ranged from original literature to review articles, monographs, and handbooks, too numerous to be listed here. The reader is reminded that property data found in these reports vary widely, so the values listed should be regarded as representative and indicative of what properties are available for packaging design and manufacture. A recommended source of data for important packaging materials is the "American Institute of Physics Handbook, " McGraw-Hill Book Company, New York, an annual publication. 123

125 TABLE E-1 Interconnection and Packaging Materials: Metals . . M. P. p 0 Material ( C) (grtcm3) (n-cm) TCE ~ (ppm/ C) (W/cm C) Uses aluminum 660 2.72.6xlO-6 23 2.1 Chip conductor and wire bonds Gold 1063 19.32.4xlO 6 14 3.4 Hybrid conductor and wire bonds Copper 1083 8.91.7x10-6 17 3.8 Lead frame and hybrid, Pea, and conductor Lead 327 112x10-5 29 0.3 Solder attach Nolybdenum 2610 104.8xlO-6 4 1.3 Co-fired on ceramic conductor Tungsten 3380 195.5x10-6 4 1.5 Co-fired on ceramic conductor TABLE E-2 Interconnect i on and Packag i ng Mater i a l s: Organ i c max use temp p a' a" a TCE He ~ C) (gr/cm3) - - (SI-cm) (pprn/ C] (~/cm C) Uses Epoxy (70% SiO2) 170 1.8 3.8 0.034X1016 20 0.002 Packaging Epoxy glass (FR-4} 120 1.9 4-5 0.05loll 15 0.02 Multilayer Board Substrate Adv. epoxy (resin only) 180 1.2 3.7 0.02told 55 0.02 Multilayer Board Substrate Triazine 250 1.26 3.1 0.001>1013 50 0.002 Hybrid dielectric '3T resin (laminate) 290 1.28 4.0 0.01lol5 15 0.005 Flexible Substrate Polyimide 400 1.42 3.6 0.011ol6 50 0.0007 Flexible Substrate Polyimide 310 1.4 3.5-5 0.011ol6 50 0.0007 Interlayer Dielectric

126 TABLE E-3 Interconnection and Packag sing Materials: Inorganics max use temp p a' e" o TCE Material ~ C) (gr/cm3) - - (~-cm C) (ppm/ C] (W/cm C) Uses Alumina (ceramic) 1,600 4.0 9.5 0.003 1014 6.5 0.3 Hybrid substrates/chip carriers Silica (fused) 1,100 2.2 3.8 <10-4 ,1ol7 0.6 0.02 Filler for molding epoxies Si licon nitride 2,000 3 6 NM 1016 0.8 0.3 Candidate substrates Aluminum nitride 1,800 3.3 8.9 0.004 lo13 4.5 3.2 Candidate substrates Silicon carbide 2,100 3.2 40 0.2 1013 3 7 2.7 Candidate substrates Silicon 1,400 2.3 12 NM V 2.6 1.5 Candidate substrates Diamond >3,500 3.5 5.7 NM >102° 0.9 20 Candidate encapsulation Glass-ceramic >1,000 >4 7-10 NM V >3 0.05 Candidate substrates Beryllia 1,500 3 7 10-3 lol4 6 2.6 Chip carriers _ .. NM = not meaningful V = varies with composition and impurity level

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