National Academies Press: OpenBook

Beam Technologies for Integrated Processing (1992)

Chapter: APPENDIX A: ACRONYMS AND ABBREVIATIONS

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Suggested Citation:"APPENDIX A: ACRONYMS AND ABBREVIATIONS." National Research Council. 1992. Beam Technologies for Integrated Processing. Washington, DC: The National Academies Press. doi: 10.17226/2006.
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APPENDIX A
ACRONYMS AND ABBREVIATIONS


ac

alternating current

AI

artificial intelligence

ARE

activated reactive evaporation

A/V

surface area-to-volume ratio


CBE

chemical beam epitaxy

CBN

cubic boron nitride

CCVD

conventional chemical vapor deposition (also CVD)

CVD

chemical vapor deposition (also CCVD)

CVI

chemical vapor infiltration

cw

continuous wave


dc

direct current

DECR

distributed ECR

DLC

diamond-like carbon

DRAM

dynamic RAM


EB

electron beam (also e-beam)

ECR

electron cyclotron resonance


FET

field effect transistor

FIB

focused ion beam

FMS

flexible machining system


GaAs

gallium arsenide

GSMBE

gas-source MBE


HBT

heterojunction bipolar transistor

HEMT

high electron mobility transistor

HFET

heterojunction FET


IC

integrated circuit

IMPATT

impact avalanche and transit time

IR

infrared


LACVD

laser-assisted CVD

LCVD

laser CVD

LDD

low-doped drain

LPCVD

low-pressure CVD


MBE

molecular beam epitaxy

MMST

Microelectronics Manufacturing Science and Technology

MOCVD

metalorganic CVD

MOMBE

metalorganic MBE

MOS

metal-oxide-semiconductor


Nd-YAG

neodymium-yttrium aluminum garnet


PACVD

plasma-assisted CVD (also PECVD)

PAPVD

plasma-assisted PVD

PECVD

plasma-enhanced CVD (also PACVD)

polydiamond

polycrystalline diamond

Suggested Citation:"APPENDIX A: ACRONYMS AND ABBREVIATIONS." National Research Council. 1992. Beam Technologies for Integrated Processing. Washington, DC: The National Academies Press. doi: 10.17226/2006.
×

PVD

physical vapor deposition

PAPVD

plasma-assisted PVD


RAMs

random access memories

RE

reactive evaporation

rf

radio frequency

RIBE

reactive ion beam etching

RIE

reactive ion etching


SEMI

Semiconductor Equipment and Materials Institute

SIMS

secondary ion mass spectroscopy


TACVD

thermally assisted CVD

TFT

thin film transistor


UFMP

ultrafine metal powders

UHMWPE

ultrahigh molecular weight polyethylene

UV

ultraviolet


via

a conducting through-path perpendicular to the plane of the substrate

VLS

vapor-liquid-solid

Suggested Citation:"APPENDIX A: ACRONYMS AND ABBREVIATIONS." National Research Council. 1992. Beam Technologies for Integrated Processing. Washington, DC: The National Academies Press. doi: 10.17226/2006.
×
Page 85
Suggested Citation:"APPENDIX A: ACRONYMS AND ABBREVIATIONS." National Research Council. 1992. Beam Technologies for Integrated Processing. Washington, DC: The National Academies Press. doi: 10.17226/2006.
×
Page 86
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Beam technologies play an important role in microelectronic component fabrication and offer opportunities for application in other manufacturing schemes. Emerging beam technologies that incorporate potential for sensors, control, and information processing have created new opportunities for integrated processing of materials and components.

This volume identifies various beam technologies and their applications in electronics and other potential manufacturing processes. Recommendations for research and development to enhance the understanding, capabilities, and applications of beam technologies are presented.

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