D
Sources for Further Reading
There is a substantial literature on radiation testing of electronics for space use. Below is a list of some sources for further reading.
Bellesia, B., Brugger, M., Ferrari, A., Kramer, D., Losito, R., Myers, S., Pojer, et al. 2009. Impacts of SEEs ‘Radiation to Electronics’ Study Group (R2E). Pp. 160-170 in Proceedings of Chamonix 2009 Workshop on LHC Performance. https://espace.cern.ch/acc-tec-sector/Chamonix/Chamx2009/papers/MB_6_03.pdf.
Belyakov, V.V., Chumakov, A.I., Nikiforov, A.Y., Pershenkov, V.S., Skorobogatov, P.K., and Sogoyan, A.V. 2003. Prediction of local and global ionization effects on ICs: The synergy between numerical and physical simulation. Russian Microelectronics 32(2):105-118.
Cellere, G., and Paccagnella, A. 2004. A review of ionizing radiation effects in floating gate memories. IEEE Transactions on Device and Materials Reliability 4(3):359-370.
Chatterji, S., Heuser, J.M., Lymanets, A., and Sorokin, I. 2010. Development of radiation hard silicon sensors for the CBM Silicon Tracking System using simulation approach. IEEE Nuclear Science Symposium Conference Record 5873841:659-661.
Cubillos, J.C., Trikoupis, N., and Mekki, J. 2016. Radiation tolerance of programmable voltage supply and high galvanic insulation readout electronics used by CERN’s LHC cryogenics. IEEE Transactions on Nuclear Science 63(4):2022-2028.
Del Monte, E., Pacciani, L., Porrovecchio, G., Soffitta, P., Costa, E., Di Persio, G., Feroci, M., et al. 2005. Radiation-induced effects on the XAA1.2 ASIC chip for space application. Nuclear Instruments and Methods in Physics Research, Section A 538(1-3):465-482.
Dodd, P.E. 2005. Physics-based simulation of single-event effects. IEEE Transactions on Device and Materials Reliability 5(3):343-357.
Feng, Y.-J., Hua, G.-X., and Liu, S.-F. 2007. Radiation hardness for space electronics. Yuhang Xuebao/Journal of Astronautics 28(5):1071-1080.
Fleetwood, D.M., Winokur, P.S., and Dodd, P.E. 1999. An overview of radiation effects on electronics in the space telecommunications environment. Microelectronics Reliability 40(1):17-26.
Furano, G., Jansen, R., and Menicucci, A. 2013. Review of radiation hard electronics activities at European space agency. Journal of Instrumentation 8(2):C02007.
Hidding, B., Karger, O., Königstein, T., Pretzler, G., Manahan, G.G., McKenna, P., Gray, R., et al. 2017. Laser-plasma-based space radiation reproduction in the laboratory. Scientific Reports 7:42354.
Kramberger, G., Baselga, M., Cindro, V., Fernandez-Martinez, P., Flores, D., Galloway, Z., Gorišek, A., et al. 2015. Radiation effects in low gain avalanche detectors after hadron irradiations. Journal of Instrumentation 10(7):P07006.
Krohn, M., Bentele, B., Christian, D.C., Cumalat, J.P., Deptuch, G., Fahim, F., Hoff, J., et al. 2015. Radiation tolerance of 65 nm CMOS transistors. Journal of Instrumentation 10(12):P12007.
Malagón, D., Bota, S.A., Torrens, G., Gili, X., Praena, J., Fernández, B., Macías, M., et al. 2017. Soft error rate comparison of 6T and 8T SRAM ICs using mono-energetic proton and neutron irradiation sources. Microelectronics Reliability 78:38-45.
Michálek, V., Procházka, I., and Blažej, J. 2015. Twenty years of RAD-hard K14 SPAD in space projects. Sensors (Switzerland) 15(8):18178-18196.
Musseau, O. 1999. The effects of cosmic ions on electronic components, Chapter 12, Pp. 781-890, in Instabilities in Silicon Devices. https://doi.org/10.1016/S1874-5903(99)80019-6.
Nidhin, T.S., Bhattacharyya, A., Behera, R.P., Jayanthi, T., and Velusamy, K. 2017. Understanding radiation effects in SRAM-based field programmable gate arrays for implementing instrumentation and control systems of nuclear power plants. Nuclear Engineering and Technology 49(8):1589-1599.
Pease, R.L. 2004. Hardness assurance for commercial microelectronics. International Journal of High Speed Electronics and Systems 14(2):543-561.
Rathod, S.S., Saxena, A.K., and Dasgupta, S. 2011. Radiation effects in MOS-based devices and circuits: A review. IETE Technical Review (Institution of Electronics and Telecommunication Engineers, India) 28(6):451-469.
Senger, P. 2017. The heavy-ion program of the future FAIR facility. Journal of Physics: Conference Series 798(1):012062.
Srinivasan, G.R. 1996. Modeling the cosmic-ray-induced soft-error rate in integrated circuits: An overview. IBM Journal of Research and Development 40(1):77-88.
