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Appendix D: Acronyms
Pages 74-76

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From page 74... ... D Acronyms 1D one-dimensional 2D two-dimensional 3D three-dimensional AFM atomic force microscopy AIMD ab initio molecular dynamic ALD atomic-layer deposition BCC body-centered cubic CALPHAD Computer Coupling of Phase Diagrams and Thermochemistry CCA complex concentrated alloy CMOS complementary metal-oxide-semiconductor COI community of interest CVD chemical vapor deposition DFT density functional theory DMMI Defense Materials Manufacturing and Infrastructure DoD Department of Defense DOE Department of Energy DSA directed self-assembly 74 Read the entire page →
From page 75... ... Appendix D 75 EUVL extreme ultraviolet lithography FCC face-centered cubic FET field effect transistor FinFET fin field effect transistor GPa gigapascal h-BN hexagonal boron nitride HCP hexagonal-close packed HEA high-entropy alloy ILP instruction-level parallelism IMEC Interuniversity MicroElectronics Center MOSFET metal-oxide-semiconductor field effect transistor MPEA multi-principal-element alloy NIST National Institute of Standards and Technology NMMB National Materials and Manufacturing Board NRI Nanoelectronics Research Initiative ORNL Oak Ridge National Laboratory PEB perpendicular exchange bias PI principal investigator SEM scanning electron microscopy TCAD technology computer-aided design TEM transmission electron microscopy TMD transition metal dichalcogenide TPa terapascal VAN vertically aligned nanocomposite XML extensible markup language Read the entire page →

From page 74...

... D Acronyms 1D one-dimensional 2D two-dimensional 3D three-dimensional AFM atomic force microscopy AIMD ab initio molecular dynamic ALD atomic-layer deposition BCC body-centered cubic CALPHAD Computer Coupling of Phase Diagrams and Thermochemistry CCA complex concentrated alloy CMOS complementary metal-oxide-semiconductor COI community of interest CVD chemical vapor deposition DFT density functional theory DMMI Defense Materials Manufacturing and Infrastructure DoD Department of Defense DOE Department of Energy DSA directed self-assembly 74

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From page 75...

... Appendix D 75 EUVL extreme ultraviolet lithography FCC face-centered cubic FET field effect transistor FinFET fin field effect transistor GPa gigapascal h-BN hexagonal boron nitride HCP hexagonal-close packed HEA high-entropy alloy ILP instruction-level parallelism IMEC Interuniversity MicroElectronics Center MOSFET metal-oxide-semiconductor field effect transistor MPEA multi-principal-element alloy NIST National Institute of Standards and Technology NMMB National Materials and Manufacturing Board NRI Nanoelectronics Research Initiative ORNL Oak Ridge National Laboratory PEB perpendicular exchange bias PI principal investigator SEM scanning electron microscopy TCAD technology computer-aided design TEM transmission electron microscopy TMD transition metal dichalcogenide TPa terapascal VAN vertically aligned nanocomposite XML extensible markup language

Read the entire page →

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Appendix D: Acronyms Pages 74-76

Appendix D: Acronyms
Pages 74-76