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Memorial Tributes Volume 6 (1993) / Chapter Skim
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Robert N. Noyce
Pages 154-159

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From page 155...
... on space-charge generated currents in silicon pen junctions explained the observed voltage current characteristics. This discovery was an important foundation for subsequent development of silicon transistors and other semiconductor devices.
From page 156...
... By adding extra junctions in the silicon wafers the individual circuit elements could be isolated electrically from each other, and a metal film insulated from the silicon by a silicon dioxide layer then could be used to form interconnections. Shortly after Noyce's invention, Texas Instruments Inc.
From page 157...
... This decision helped trigger the explosion of the integrated circuit market. In 196X Noyce left Fairchild and cofounded Intel Corporation to pursue opportunities in large-scale integration.
From page 158...
... , the Faraday Medal from the Institute of Electrical Engineers (United Kingdom) , the Cledo Brunetti Award from the IEEE, and the Harry Goode Memorial Award from the American Federation of Information Processing Societies.


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