Skip to main content

Materials for High-Temperature Semiconductor Devices (1995) / Chapter Skim
Currently Skimming:

Device Testing for High-Temperature Electronic Materials
Pages 61-64

The Chapter Skim interface presents what we've algorithmically identified as the most significant single chunk of text within every page in the chapter.
Select key terms on the right to highlight them within pages of the chapter.


From page 61...
... A representative set of conditions, with some associated comments, Is given in Table 6-1. Figure 6-1 illustrates the variation of threshold voltage with temperature for stateof-the-art silicon MOSFETs.
Read the entire page →
From page 62...
... Effects such as metal electromigration, impurity diffusion in the semiconductor, and phase changes occurring in contact regions, have not yet been adequately tested. A possible exception is the last result, which was based on silicon integrated circuits with conventional metallization and feature sizes that are large (about 7.5 micrometers)
Read the entire page →
From page 63...
... (°C) Substrate Method Reference SiC diode rectifiers1,000 350 Hermetic glass Not reported Edmond et al., 1991 packages Silicon MOSFETS1,000 200 Alumina AlSi eutectic Palmer and Heckman, 1978 Silicon bipolar quad500 300 Not reported Not reported Beasom and op-amp Patterson, 1982 Silicon-based ring4,000 250 Not reported Not reported Migitaka and oscillators Kurachi, 1994 These limitations may demand new and innovative techniques for device attachment and connection, such as the use of graded attachment techniques or compliant attachment methods, in which the differences in thermal expansion are taken up by a relatively flexible part of the attachment.
Read the entire page →

Key Terms

  • accelerated testing
  • failure rates
  • life tests
  • sic diode
  • method reference

  • leakage currents
  • phase changes
  • glass ceramic
  • adequately tested
  • silicon integrated

  • lowertemperature applications
  • activation energy
  • bridge devices
  • compliant attachment
  • fielded electronic

  • device operation
  • devices intended
  • rates noted
  • minority carrier
  • thermal expansion

  • variables testing
  • work remains
  • resulting failure
  • carrier lifetime
  • attachment techniques

  • failure modes
  • current limits
  • testing method
  • fundamental limits
  • graded attachment


    • This material may be derived from roughly machine-read images, and so is provided only to facilitate research.
    More information on Chapter Skim is available.