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Plasma Processing and Processing Science (1995) / Chapter Skim
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Chapter 5--Ion Implantation and Surface Modification
Pages 15-18

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From page 15...
... Two general methods are in use today: ion beam implantation, in which a beam of ions is clirected toward a substrate, and plasma implantation, in which the ions produced in a plasma discharge surrounding or near the object to be implanted are extracted from the plasma and accelerated into the object. Ion implantation is clesignec!
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From page 16...
... In both cases, the substrate requires an applied bias voltage for ion acceleration, but dielectrics will undergo charging anti therefore inherently clegra(le the ion acceleration sheath, thus modifying the implantation. Accordingly, the acceleration voltage will be appliecl either to a backing conductor or to a conducting metallic, graphitic, or ctiamond-like carbon film deposited on the substate, which will also act to inhibit its charging.
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From page 17...
... Implantation of Nonmetals Four major classes of nonmetallic materials are amenable to treatment by PSII: glasses, ceramics, polymers, and semiconductors. Extensive examination of the effectiveness of PSII for substrate modification is envisaged: magnetic domain formation in glasses, erbium eloping of polymer waveguicles, lattice structure modification of mica, clopant implantation into semiconductors, and surface property modification of plastics and polymers for thin film deposition and for wear improvement of gears and drive units.
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From page 18...
... These areas include design of efficient pulse modulators for high power delivery, control of secondary emission, processes in plasma and sheath formation, computation of ion trajectories near complex boundaries, electric fields in implantation of dielectric materials, implantation of mixtures of ions, numerical simulation of surface kinetics, and implantation and doping of semiconductors. It is of course not sufficient to understand the physical processes and (remonstrate that the implantation can take place; an economic assessment is also required to show feasibility.
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Key Terms

  • ion beam
  • beam implantation
  • plasma implantation
  • implantation process
  • plasma source

  • vacuum chamber
  • semiconductor applications
  • ion acceleration
  • experimental design
  • source ion

  • electric field
  • metallic coatings
  • wear resistance
  • secondary emission
  • nitrogen ions

  • mechanical properties
  • comparatively short
  • particle density
  • inward electric
  • drive units

  • near complex
  • implantation processes
  • surface hardening
  • excessive polymer
  • resistance reduced

  • dielectric materials
  • accelerates positive
  • unwanted electrical
  • negative potential
  • structure modification


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