Plasma Processing and Processing Science (1995) / Chapter Skim
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Chapter 7--Flat Panel Displays
Chapter 7--Flat Panel Displays
Pages 25-29
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From page 25... ...
That the dominant center of LCD technology and its concomitant technological infrastructure lie outside the United States is of concern industrially, politically, and militarily. Indeed, the Executive Branch has taken a strong stand on the urgent need for the United States to become competitive in the world market in flat panel displays.
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From page 26... ...
. Passive matrix LCD Simple multiplex Active addressing Active matrix LCD Amorphous silicon Polycrystalline silicon Transfer silicon Thin film electro-luminescent displays Passive matrix Active matrix Digital micromirror devices Plasma displays Field emission displays Large/small Large/small Large Small Small Large Large Most of the interest in flat displays is for direct view displays.
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From page 27... ...
At this point it can be handled in much the same way as an aSi active matrix substrate to fabricate a complete active matrix LCD. The exciting aspect of the Kopin technology is that it results in excellent display performance because the thin silicon layer is of crystalline quality, and furthermore the active matrix is processed exactly like it is for fabricating VLSI circuits.
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From page 28... ...
Additionally, growth of amorphic diamond films with the appropriate properties by plasma-enhanced chemical vapor deposition may be more cost-effective than the current technology of laser ablation. A ROLE FOR NRL The challenge for introducing plasma processing into display applications is to maintain process performance while increasing process areas and rates and decreasing process equipment capital costs and operation and maintenance costs.
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From page 29... ...
Thus, as an example, anisotropic plasma etching is required to maintain critical dimensions in small etching geometries for VESI, whereas in displays, anisotropic etching is required to maintain process tolerance over larger areas with minimum dimensions. Overetching in depth can be tolerated, whereas lateral etch nonuniformities cannot.
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