Beam Technologies for Integrated Processing (1992) / Chapter Skim
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APPENDIX A: ACRONYMS AND ABBREVIATIONS
APPENDIX A: ACRONYMS AND ABBREVIATIONS
Pages 85-86
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From page 85... ...
CVI chemical vapor infiltration cw continuous wave do direct current DECR distributed ECR DLC diamond-like carbon DRAM dynamic RAM EB electron beam (also e-beam) ECR electron cyclotron resonance FET field effect transistor FIB focused ion beam EMS flexible machining system GaAs gallium arsenide GSMBE gas-source MBE HBT heterojunction bipolar transistor HEMT high electron mobility transistor HEET heterojunction FET IC integrated circuit IMPATT impact avalanche and transit time IR infrared LACVD laser-assisted CVD LCVD laser CVD LDD low-doped drain LPCVD low-pressure CVD MBE molecular beam epitaxy MMST Microelectronics Manufacturing Science and Technology MOCVD metalorganic CVD MOMBE metalorganic MBE MOS metal-oxide-semiconductor Nd-YAG neodymium-yttrium aluminum garnet PACVD plasma-assisted CVD (also PECVD)
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From page 86... ...
86 PVD PAPVD RAMs RE rf RIBE RIE SEMI SIMS TACVD TFT UFMP UHMWPE UV via VLS physical vapor deposition plasma-assisted PVD random access memories reactive evaporation radio frequency reactive ion beam etching reactive ion etching Semiconductor Equipment and Materials Institute secondary ion mass spectroscopy thermally assisted CVD thin film transistor ultrafine metal powders ultrahigh molecular weight polyethylene ultraviolet a conducting through-path perpendicular to the plane of the substrate vapor- liquid-solid
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