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Database Needs for Modeling and Simulation of Plasma Processing (1996)

Chapter: Appendix A: Acronyms and Abbreviations

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Suggested Citation:"Appendix A: Acronyms and Abbreviations." National Research Council. 1996. Database Needs for Modeling and Simulation of Plasma Processing. Washington, DC: The National Academies Press. doi: 10.17226/5434.
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Page 59
Suggested Citation:"Appendix A: Acronyms and Abbreviations." National Research Council. 1996. Database Needs for Modeling and Simulation of Plasma Processing. Washington, DC: The National Academies Press. doi: 10.17226/5434.
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Page 60

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ACRONYMS AND ABBREVIATIONS 59 Appendix A: Acronyms and Abbreviations AFM atomic force microscopy BEOL back end of the line CARS coherent anti-Stokes Raman scattering CD critical dimension CFM contamination-free manufacturing CMOS complementary metal oxide semiconductor CVD chemical vapor deposition DFWM degenerate four-wave mixing DRAM dynamic random access memory ECR electron cyclotron resonance E/N ratio of electric field to gas density FOM Fundamenteel Onderzoek der Materie (a research institute in the Netherlands) FTIR Fourier transform infrared FTMS Fourier transform mass spectroscopy IC integrated circuit ICP inductively coupled plasma IR infrared IRIS imaging of radicals interacting with surfaces JANAF Joint Army-Navy-Air Force Kn Knudsen number LIF laser-induced fluorescence MD molecular dynamics MOSFET metal oxide semiconductor field effect transistor MPU microprocessor unit NIST National Institute of Standards and Technology PECVD plasma-enhanced chemical vapor deposition PVD physical vapor deposition rf radio frequency RIE reactive ion etching SEM scanning electron microscopy SEP stimulated emission pumping SIA Semiconductor Industry Association SPIE The International Society for Optical Engineering TALIF two-photon allowed laser-induced fluorescence TEM transmission electron microscopy TEOS tetraethoxysilane UHV ultrahigh vacuum ULSI ultralarge-scale integration UV ultraviolet VLSI very large scale integration

ION PROCESSES, NEUTRAL CHEMISTRY, AND THERMOCHEMICAL DATA 60

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In spite of its high cost and technical importance, plasma equipment is still largely designed empirically, with little help from computer simulation. Plasma process control is rudimentary. Optimization of plasma reactor operation, including adjustments to deal with increasingly stringent controls on plant emissions, is performed predominantly by trial and error. There is now a strong and growing economic incentive to improve on the traditional methods of plasma reactor and process design, optimization, and control. An obvious strategy for both chip manufacturers and plasma equipment suppliers is to employ large-scale modeling and simulation. The major roadblock to further development of this promising strategy is the lack of a database for the many physical and chemical processes that occur in the plasma. The data that are currently available are often scattered throughout the scientific literature, and assessments of their reliability are usually unavailable.

Database Needs for Modeling and Simulation of Plasma Processing identifies strategies to add data to the existing database, to improve access to the database, and to assess the reliability of the available data. In addition to identifying the most important needs, this report assesses the experimental and theoretical/computational techniques that can be used, or must be developed, in order to begin to satisfy these needs.

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